LBC848CWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G S-LBC846AWT1G LBC846AWT3G S-LBC846AWT3G Package SC-70 SC-70 Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G CWT1G LBC848AWT1G,BWT1G CWT1G S-LBC846AWT1G,BWT1G S-LBC847AWT1G,BWT1G CWT1G S-LBC848AWT1G,BWT1G CWT1G Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 3 1 2 SOT–323 /SC–70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max Unit 150 mW 833 –55 to +150 °C/W °C 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) LBC846 Series LBC847 Series LBC848 Series Collector–Emitter Breakdown Voltage (IC = 10 µA...