Document
AOT20N60/AOTF20N60
600V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT20N60L&AOTF20N60L
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
700V@150℃ 20A < 0.37Ω
D
G
DS G
S GD
AOT20N60
AOTF20N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT20N60
AOTF20N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
20 20* 12 12*
80 6.5 630 1260 5
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
50 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
AOT20N60 65 0.5
AOTF20N60 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
2.5
S
Units V V
A
A mJ mJ V/ns W W/ oC °C °C
Units °C/W °C/W °C/W
Rev2: Dec 2011
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AOT20N60/AOTF20N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
BVDSS /∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=10A
gFS Forward Transconductance
VDS=40V, ID=10A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600 700
V
0.8 V/ oC
1 µA
10
±100 nΑ
3.2 3.8 4.5
V
0.29 0.37 Ω
25 S
0.69 1
V
20 A
80 A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
2448 190 13 0.7
3061 273 22.8 1.4
3680 360 35 2.1
pF pF pF Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr tD(off)
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=300V, ID=20A, RG=25Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/µs,VDS=100V.