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AOTF20N60 Dataheets PDF



Part Number AOTF20N60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 20A N-Channel MOSFET
Datasheet AOTF20N60 DatasheetAOTF20N60 Datasheet (PDF)

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT20N.

  AOTF20N60   AOTF20N60



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AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT20N60L&AOTF20N60L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 700V@150℃ 20A < 0.37Ω D G DS G S GD AOT20N60 AOTF20N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT20N60 AOTF20N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 20 20* 12 12* 80 6.5 630 1260 5 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT20N60 65 0.5 AOTF20N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 0.3 2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev2: Dec 2011 www.aosmd.com Page 1 of 6 AOT20N60/AOTF20N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A gFS Forward Transconductance VDS=40V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current 600 700 V 0.8 V/ oC 1 µA 10 ±100 nΑ 3.2 3.8 4.5 V 0.29 0.37 Ω 25 S 0.69 1 V 20 A 80 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2448 190 13 0.7 3061 273 22.8 1.4 3680 360 35 2.1 pF pF pF Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=480V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=300V, ID=20A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/µs,VDS=100V.


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