DatasheetsPDF.com

FDS8449_F085 Dataheets PDF



Part Number FDS8449_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 40V N-Channel PowerTrench MOSFET
Datasheet FDS8449_F085 DatasheetFDS8449_F085 Datasheet (PDF)

FDS8449_F085 40V N-Channel PowerTrench®MOSFET July 2009 FDS8449_F085 40V N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application • Inverter • Power Supplies Features • 7.6 A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V • High power handling capability in a widel.

  FDS8449_F085   FDS8449_F085



Document
FDS8449_F085 40V N-Channel PowerTrench®MOSFET July 2009 FDS8449_F085 40V N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application • Inverter • Power Supplies Features • 7.6 A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V • High power handling capability in a widely used surface mount package • RoHS compliant • Qualified to AEC Q101 DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking FDS8449 Device FDS8449_F085 Reel Size 13’’ Ratings 40 ±20 7.6 50 2.5 1 –55 to +150 50 125 25 Tape width 12mm Units V V A W °C °C/W Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDS8449_F085 Rev. A 1 www.fairchildsemi.com FDS8449_F085 40V N-Channel PowerTrench®MOSFET Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 3) EAS Drain-Source Avalanche Energy VDD = 40 V, IAS Drain-Source Avalanche Current ID = 7.3 A, L = 1 mH Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage VGS = 0 V, ID = 250 μA ID = 250 μA, Referenced to 25°C VDS = 32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics (Note 2) VGS(th) ΔVGS(th) ΔTJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 μA ID = 250 μA, Referenced to 25°C VGS = 10 V, ID = 7.6 A VGS = 4.5 V, ID = 6.8 A VGS= 10 V, ID = 7.6 A, TJ=125°C gFS Forward Transconductance VDS = 10 V, ID = 7.6 A Dynamic Characteristics Ciss Input Capacitance VDS = 20 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz Crss Reverse Transfer Capacitance RG Gate Resistance f = 1.0 MHz Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 20 V, VGS = 5 V ID = 7.6 A, Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 7.6 A, IS = 2.1 A (Note 2) diF/dt = 100 A/µs 40 1 27 mJ 7.3 A V 34 mV/°C 1 ±100 μA nA 1.9 3 V –5 mV/°C 21 29 mΩ 26 36 29 43 21 S 760 pF 100 pF 60 pF 1.2 Ω 9 18 ns 5 10 ns 23 17 ns 3 6 ns 7.7 11 nC 2.4 nC 2.8 nC 0.76 1.2 17 7 V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. 2 Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDS8449_F085 Rev. A 2 Scale 1 : 1 on letter size paper www.fairchildsemi.com ID, DRAIN CURRENT (A) FDS8449_F085 40V N-Channel PowerTrench MOSFET Typical Characteristics RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 VGS = 10V 16 6.0V 12 4.0V 4.5V 3.5V 8 3.0V 4 0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 2.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = 3.0V 2.6 2.2 1.8 3.5V 1.4 4.0V 1 4.5V 6.0V 10V 0.6 0 4 8 12 16 ID, DRAIN CURRENT (A) 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 ID = 7.6A VGS = 10V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. RDS(ON), ON-RESISTANCE (OHM) 0.07 0.06 ID = 3.5A 0.05 0.04 0.03 0.02 TA = 25oC TA = 125oC 0.01 2 468 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 VDS = 10V 15 10 TA = 125oC -55oC 5 25oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. IS, REVERSE DRAIN CURRENT (A) 100 VGS = 0V 10 1 0.1 0.01 TA = 125oC 25oC -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIO.


UPA2821T1L FDS8449_F085 FDMS8888


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)