Document
FDS8449_F085 40V N-Channel PowerTrench®MOSFET
July 2009
FDS8449_F085
40V N-Channel PowerTrench® MOSFET
General Description
These N-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Application
• Inverter
• Power Supplies
Features
• 7.6 A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V
• High power handling capability in a widely used surface mount package
• RoHS compliant • Qualified to AEC Q101
DD DD DD DD
SO-8
Pin 1 SO-8 SS SS SS GG
54 63 72 81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking FDS8449
Device FDS8449_F085
Reel Size 13’’
Ratings
40 ±20 7.6 50 2.5
1 –55 to +150
50 125 25
Tape width 12mm
Units
V V A W °C
°C/W
Quantity 2500 units
©2009 Fairchild Semiconductor Corporation FDS8449_F085 Rev. A
1
www.fairchildsemi.com
FDS8449_F085 40V N-Channel PowerTrench®MOSFET
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 3)
EAS
Drain-Source Avalanche Energy
VDD = 40 V,
IAS Drain-Source Avalanche Current
ID = 7.3 A, L = 1 mH
Off Characteristics
BVDSS ΔBVDSS
ΔTJ IDSS
IGSS
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Gate–Body Leakage
VGS = 0 V,
ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
ΔVGS(th) ΔTJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
VDS = VGS, ID = 250 μA ID = 250 μA, Referenced to 25°C
VGS = 10 V, ID = 7.6 A VGS = 4.5 V, ID = 6.8 A VGS= 10 V, ID = 7.6 A, TJ=125°C
gFS Forward Transconductance
VDS = 10 V, ID = 7.6 A
Dynamic Characteristics
Ciss Input Capacitance
VDS = 20 V, V GS = 0 V,
Coss Output Capacitance
f = 1.0 MHz
Crss Reverse Transfer Capacitance
RG Gate Resistance
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time
VDD = 20 V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge
VDS = 20 V, VGS = 5 V
ID = 7.6 A,
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward Voltage
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
VGS = 0 V, IF = 7.6 A,
IS = 2.1 A (Note 2) diF/dt = 100 A/µs
40 1
27 mJ 7.3 A
V
34 mV/°C
1 ±100
μA nA
1.9 3
V
–5 mV/°C
21 29 mΩ 26 36 29 43
21 S
760 pF 100 pF 60 pF 1.2 Ω
9 18 ns 5 10 ns 23 17 ns 3 6 ns 7.7 11 nC 2.4 nC 2.8 nC
0.76 1.2 17 7
V nS nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper
b) 125°C/W when mounted on a minimum pad.
2 Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDS8449_F085 Rev. A
2
Scale 1 : 1 on letter size paper
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ID, DRAIN CURRENT (A)
FDS8449_F085 40V N-Channel PowerTrench MOSFET
Typical Characteristics
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
20 VGS = 10V
16
6.0V 12
4.0V 4.5V
3.5V
8 3.0V
4
0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.5
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3 VGS = 3.0V
2.6
2.2
1.8 3.5V
1.4 4.0V
1
4.5V
6.0V
10V
0.6 0
4 8 12 16 ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 ID = 7.6A VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with Temperature.
RDS(ON), ON-RESISTANCE (OHM)
0.07 0.06
ID = 3.5A
0.05
0.04
0.03 0.02
TA = 25oC
TA = 125oC
0.01 2
468 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
20 VDS = 10V
15
10
TA = 125oC
-55oC
5
25oC
0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
IS, REVERSE DRAIN CURRENT (A)
100 VGS = 0V
10
1
0.1
0.01
TA = 125oC 25oC
-55oC
0.001
0.0001 0
0.2 0.4 0.6 0.8
1
VSD, BODY DIO.