FDD050N03B N-Channel PowerTrench® MOSFET
March 2013
FDD050N03B
N-Channel PowerTrench® MOSFET
30 V, 90 A, 5.0 mΩ
Features
RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A Fast Switching Speed Low Gate Charge, QG = 33 nC( Typ.) High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
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