TMPF7N60G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G VDSS = 660 V @Tjmax ID = 7A RDS(on) = 1.25 W(max) @ VGS= 10 V D G S Device TMP7N60 / TMPF7N60 TMP7N60G / TMPF7N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP7N60 / TMPF7N60 TMP7N60G / TMPF7N60G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP7N60(G) TMPF7N60(G) 600 ±30 7 7* 4.3 4.3 * 28 28* 200 7 14.3 143 46.6 1.16 0.37 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA April 2010 : Rev1 www.trinnotech.com TMP7N60(G) 0.87 62.5 TMPF7N60(G) 2.68 62.5 Unit ℃/W ℃/W 1/5 TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G Electrical Characteristics : TC=25℃, unless otherwise noted Paramete...