FET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G
VDSS = 660 V @Tjmax ID = 7A RDS(on) = 1.25 W(max) @ VGS= 10 V
D
G
S
Device TMP7N60 / TMPF7N60 TMP7N60G / TMPF7N60G
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP7N60 / TMPF7N60 TMP7N60G / TMPF7N60G
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP7N60(G) TMPF7N60(G) 600 ±30
7 7* 4.3 4.3 * 28 28*
200 7
14.3 143 46.6 1.16 0.37
4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
April 2010 : Rev1
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TMP7N60(G) 0.87 62.5
TMPF7N60(G) 2.68 62.5
Unit ℃/W ℃/W
1/5
TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G
Electrical Characteristics : TC=25℃, unless otherwise noted
Paramete...
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