BFL4004

Ordering number : ENA1796 BFL4004 SANYO Semiconductors DATA SHEET BFL4004 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ON-resistance RDS(on)=1.9Ω (typ.) Input capacitance Ciss=710pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS IDc*1 IDpack*2 IDP PD Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 800 V ±30 V 6.5 A 4.3 A 13 A 2.0 W 36 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 Avalanche Current *5 EAS IAV 241 mJ 6.5 A Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=10mH, IAV=6.5A (Fig.1) *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 4.5 2.8 Product & Package Information Package : TO-220FI(LS) JEITA, JEDEC : SC-67, SOT-186A, TO-220F Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 2 3.5 7.2 16.0 16.1 3.6 0.9 1.2 0.75 123 2.55 2.55 2.4 14.0 0.6 1....