BFL4001

Ordering number : ENA1638A BFL4001 SANYO Semiconductors DATA SHEET BFL4001 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance Avalanche resistance guarantee High-speed switching 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 6.5 A 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3 2.0 W 37 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 223 mJ Avalanche Current *5 IAV 6.5 A Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 4.7 2.54 Product & Package Information Package : TO-220F-3FS JEITA, JEDEC : SC-67 Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 1.47 MAX 0.8 123 2.54 2.54 12.98 FL4001 LOT No. 1 2.76 0....