8Kb Microwire Serial EEPROM
CAT93C76B
EEPROM Serial 8-Kb Microwire
Description The CAT93C76B is an 8−Kb Microwire Serial EEPROM memory
device whic...
Description
CAT93C76B
EEPROM Serial 8-Kb Microwire
Description The CAT93C76B is an 8−Kb Microwire Serial EEPROM memory
device which is configured as either registers of 16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C76B is manufactured using ON Semiconductor’s advanced CMOS EEPROM floating gate technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in 8−pin PDIP, SOIC, TSSOP, MSOP and 8−pad UDFN packages.
Features
High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) 1.8 V (1.65 V*) to 5.5 V Supply Voltage Range Selectable x8 or x16 Memory Organization Self−timed Write Cycle with Auto−clear Software Write Protection Power−up Inadvertant Write Protection Low Power CMOS Technology 1,000,000 Program/Erase Cycles 100 Year Data Retention Industrial and Extended Temperature Ranges Sequential Read 8−pin PDIP, SOIC, TSSOP, MSOP and 8−Pad UDFN Packages This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant†
VCC
ORG
DI
CS
CAT93C76B
DO
SK
GND Figure 1. Functional Symbol
*CAT93C76Bxx−xxL (TA = −205C to +855C)
†For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
SOIC−8 V SUFFIX CASE 751BD
UDFN−8 HU4 SUFFIX CASE 517AZ
PDIP−8 L SUFF...
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