Document
NCP5338
Integrated Driver and
MOSFET
The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338 integrated solution greatly reduces package parasitics and board space compared to a discrete component solution.
Features
• Optimized for High Frequency, High Conversion Ratio Operation • Capable of Switching Frequencies Up to 1.5 MHz • Internal Bootstrap Diode • Zero Current Detection • Undervoltage Lockout • Internal Thermal Warning / Thermal Shutdown • 40 A Continuous Output Current Capability • These are Pb−Free Devices
5 V 12−20 V
5V
ZCD Enable Output Disable PWM
Thermal Warning
THWN
VIN
VCIN
BOOT
ZCD_EN#
DISB#
PWM CGND
PHASE VSWH PGND
Vout
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1 40
QFN40 MN SUFFIX CASE 485AZ
MARKING DIAGRAM
1
NCP5338 AWLYYWWG
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NCP5338MNR2G QFN40 2500/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Figure 1. Application Schematic
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 2
1
Publication Order Number: NCP5338/D
VCIN PWM ZCD_EN#
3.4 V 97k
187k
DISB#
NCP5338
BOOT
GH VIN
Logic
Anti−Cross Conduction
VCIN
UVLO THWN/THDN
PHASE VSWH
PGND
THWN
Figure 2. Simplified Block Diagram
GL
10 VIN 9 VIN 8 VIN 7 PHASE 6 GH 5 CGND 4 BOOT 3 NC 2 VCIN 1 ZCD_EN#
VIN VIN VIN VIN VSWH PGND PGND PGND PGND PGND
11 12 13 14 15 16 17 18 19 20
VIN FLAG42
CGND FLAG41
VSWH FLAG43
40 PWM 39 DISB# 38 THWN 37 CGND 36 GL 35 VSWH 34 VSWH 33 VSWH 32 VSWH 31 VSWH
PGND 21 PGND 22 PGND 23 PGND 24 PGND 25 PGND 26 PGND 27 PGND 28 VSWH 29 VSWH 30
Figure 3. Pin Connections (Top View)
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NCP5338
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1
ZCD_EN#
Enable Zero Current Detection
2
VCIN
Control Input Voltage
3 NC No Connect
4
BOOT
Bootstrap Voltage
5, 37, FLAG 41
CGND
Control Signal Ground
6 GH High Side FET Gate Access
7
PHASE
Provides a return path for the high side driver of the internal IC. Place a high frequency
ceramic capacitor of 0.1 uF to 1.0 uF from this pin to BOOT pin.
8−14, FLAG 42
VIN Input Voltage
15, 29−35, FLAG 43
VSWH
Switch Node Output
16−28
PGND
Power Ground
36 GL Low Side FET Gate Access
38
THWN
Thermal Warning
39
DISB#
Output Disable Pin
40
PWM
PWM Drive Logic
Table 2. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
VCIN
Control Input Voltage
−0.3 V
6.5 V
VIN BOOT
Power Input Voltage (Note 1) Bootstrap Voltage
−0.3 V −0.3 V wrt/VSWH
28 V 35 V wrt/PGND, 40 V < 50 ns wrt/PGND,
6.5 V wrt/VSWH
VSWH ZCD_EN#
Switch Node Output (Note 1) Zero Current Detection
−0.3 V −0.3 V
30 V 6.5 V
PWM
PWM Drive Logic
−0.3 V
6.5 V
DISB#
Output Disable
−0.3 V
6.5 V
THWN
Thermal Warning
−0.3 V
6.5 V
Continuous Output Current, IOUT
VOIuNtp=u1t 2CuVr,rVenOtU, TFS=W1.=2
300 kHz, V (Note 2)
−
40 A
Continuous Output Current, IOUT
Output Current, FSW = 300 kHz, VIN = 12 V, VOUT = 1.2 V, LFM = 300 (Note 2)
−
50 A
Peak Output Current, Output Current, FSW = 300 kHz,
Iout−Pk (Note 3)
VIN = 12 V, VOUT = 1.2 V (Note 2)
−
80 A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. During switching of the MOSFETs, high transient voltages can appear on these pins. It is important to keep these transients within the
Maximum Ratings range. 2. IOUT rating is based on using 3.0″ x 3.0″ PCB, 6 layer, 2 oz, TA = 25°C, board design, natural convection, unless otherwise noted. 3. Peak Output Current is applied for tp = 10 ms. NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
Table 3. OPERATING RANGES
Rating
Symbol
Min Typ Max Unit
Control Input Voltage
VCIN
4.5 5 5.5 V
Input Voltage
VIN
4.5 12 20
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
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NCP5338
Table 4. THERMAL CHARACTERISTICS Rating
Thermal Resistance, High−Side FET (Note 4) Thermal Resistance, Low−Side FET (Note 4) Operating Junction Temperature Storage Temperature Moisture Sensitivity Level 4. When mounted on 1 in2 of Cu., 1 oz. Thickness.
Symbol
RQJPCB RQJPCB
TJ TS MSL
Value 11.7 2.8 −40 to 150 −55 to 150
3
Unit °C/W °C/W
°C °C
ELECTRICAL CHARACTERISTICS (Note 5) (VCIN = 5 V, VIN = 12 V, TA = −10°C to +100°C, unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
SUPPLY CURRENT
VCIN Curr.