SiR808DP

N-Channel 25 V (D-S) MOSFET SiR808DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 25 RDS(on) () 0.0089 at VGS = 10 V 0.0119 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 7.5 nC PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR808DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Rectifier Operation 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS Synchronous Buck Converter - High-Side Switch High Frequency Switching G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 25 ± 20 20g 20g 17b, c 13b, c 50 20g 3.2b, c 21 22 29.8 19 3.9b, c 2.5b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junc...