Monolithic Dual Switching Diode
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode Common Cathode
●FEATURES
1)We declare that the material of ...
Description
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode Common Cathode
●FEATURES
1)We declare that the material of product compliant with RoHS requirements and Halogen Free.
2)S- Prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBAV70LT1G A4 3000/Tape&Reel
LBAV70LT3G
A4 10000/Tape&Reel
LBAV70LT1G S-LBAV70LT1G
3
1 2
SOT-23
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Reverse Voltage
VR
Forward Current
IF
Peak Forward Surge Current IFM(surge)
Limits 70 200 500
Unit Vdc mAdc mAdc
3 CATHODE
1 ANODE
2 ANODE
●THERMAL CHARACTERISTICS Parameter Symbol
Total Device Dissipation FR–5 Board(Note 1) TA = 25°C
Derate above 25°C Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate(Note 2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature
Symbol PD
Rθ JA PD
Rθ JA T J , T stg
Max.
225 1.8 556
300 2.4 417 –55 to +150
Unit
mW mW/°C °C/W
mW mW/°C °C/W
°C
●ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Reverse Breakdown Voltage(I(BR)=100uA)
V(BR)
Min 70
Max. —
Reverse Voltage Leakage Current
IR
(VR = 25 Vdc, TJ = 150°C)
— 60
(VR = 70 Vdc)
— 2.5
(VR = 70 Vdc, TJ = 150°C)
— 100
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
—
1.5
Forward Voltage (IF = 1.0 mAdc)
VF —
715
(IF = 10 mAdc)
— 855
...
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