D628

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD628 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 7V IC Collector Current-Continunous 10 A ICM Collector Current-Peak IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 15 A 2A 80 W 150 ℃ -65~+150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD628 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 100mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 ICEO Collector Cutof...