MDI5N40

MDI5N40 N-channel MOSFET 400V MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω General Description The MDI5N40 / MDD5N40 use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N40 is suitable device for SMPS, HID and general purpose applications. Features VDS = 400V ID = 3.4A RDS(ON) ≤ 1.6Ω Applications Power Supply PFC Ballast @VGS = 10V @VGS = 10V D I-PAK G D S (TO-251) G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAR EAS TJ, Tstg Rating 400 ±30 3.4 2.15 13.6 45 0.36 4.5 4.5 170 -55~150 Unit V V A A A W W/ oC V/ns mJ mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec. 2011. Version 1.5 1 Symbol RθJA RθJC Rating 110 2.75 Unit oC/W MagnaChip Semiconductor Ltd. MDI5N40 N-channel MOSFET 400V Ordering Information Part Number MDI5N40TH MDD5N40RH Temp. Range -55~150oC -55~150oC Package I-Pak D-Pak Packing Tube Reel RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown ...