Document
2DA1971
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
Features
BVCEO > -400V IC = -0.5A Continuous Collector Current ICM = 1A Peak Pulse Current High Gain Holds up hFE ≥ 140 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Applications
High Voltage Switching
Mechanical Data
Case: SOT89 Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208 Weight: 0.05 grams (Approximate)
SOT89 Top View
C
B
E
Device symbol
E
CC
Top View Pin Out
B
Ordering Information (Note 4)
Product 2DA1971-7 2DA1971-13
Marking 1S2 1S2
Reel size (inches) 7 13
Tape width (mm) 12 12
Quantity per reel 1,000 2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YWW 1S2
Top View
1S2 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 1 = 2011) WW = Week code (01 – 53)
2DA1971
Document number: DS35669 Rev: 3 – 2
1 of 7 www.diodes.com
July 2014
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current
Symbol
VCBO VCEO VEBO
IC ICM IB
Value -400 -400
-7 -0.5 -1 -250
2DA1971
Unit V V V A A mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range
Symbol PD RθJA RθJL
TJ, TSTG
Value 1.5 83 10.4
-55 to +150
Unit W
°C/W °C/W
°C
ESD Ratings (Note 7)
Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model
Symbol ESD HBM ESD MM
Value 8,000 400
Unit JEDEC Class V 3B VC
Notes:
5. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2DA1971
Document number: DS35669 Rev: 3 – 2
2 of 7 www.diodes.com
July 2014
© Diodes Incorporated
Thermal Characteristics and Derating information
2DA1971
-IC Collector Current (A)
VCE(sat) 1 Limit
25mm x 25mm FR4 1oz Cu; single pulse
TA=25°C
100m
DC
1s
10m
100ms 10ms 1ms
100µs
1m
100m
1
10 100
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
80
25mm x 25mm FR4 1oz Cu
60
D=0.5 40
D=0.2 20
Single Pulse D=0.05
D=0.1 0 100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Transient Thermal Impedance
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
1.5 25mm x 25mm FR4
1oz Cu
1.0
0.5
0.0 0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100
25mm x 25mm FR4 1oz Cu; single pulse
TA=25°C
10
1 100µ 1m 10m 100m 1
10 100
Pulse Width (s)
Pulse Power Dissipation
1k
Thermal Resistance (°C/W)
2DA1971
Document number: DS35669 Rev: 3 – 2
3 of 7 www.diodes.com
July 2014
© Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 8)
Symbol BVCBO BVCEO BVEBO
ICES ICBO IEBO
hFE
Min -400 -400
-7 -
140 140
Typ -
-
Collector-Emitter saturation Voltage (Note 8)
VCE(sat)
-
Base-Emitter saturation Voltage (Note 8) Base-Emitter Turn-On Current (Note 8)
VBE(sat) VBE(on)
-
Transition frequency
fT -
Collector Output Capacitance Delay Time Rise Time Storage Time Fall Time
Cobo t(d) t(r) t(s) t(f)
-
Note:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
-
-0.75 -
75
19 89 111 2165 185
Max -
-100 -100 -100 450 400 -250 -400 -0.9 -0.8
-
-
2DA1971
Unit V V V nA nA nA
-
mV
V V
MHz
pF ns ns ns ns
Test Condition IC = -100µA IC = -1mA IE = -100µA VCE = -320V VCB = -320V VEB = -6V IC = -20mA, VCE = -5V IC = -100mA, VCE = -5V IC = -100mA, IB = -10mA IC = -200mA, IB = -40mA IC = -100mA, IB = -10mA IC = -200mA, VCE = -10V IC = -50mA, VC.