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2DA1971 Dataheets PDF



Part Number 2DA1971
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR
Datasheet 2DA1971 Datasheet2DA1971 Datasheet (PDF)

2DA1971 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features  BVCEO > -400V  IC = -0.5A Continuous Collector Current  ICM = 1A Peak Pulse Current  High Gain Holds up hFE ≥ 140 @ IC = -100mA  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Applications  High Voltage Switching Mechanical Data  Case: SOT89  Case material: molded plastic. “Green” molding compound. UL F.

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2DA1971 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features  BVCEO > -400V  IC = -0.5A Continuous Collector Current  ICM = 1A Peak Pulse Current  High Gain Holds up hFE ≥ 140 @ IC = -100mA  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Applications  High Voltage Switching Mechanical Data  Case: SOT89  Case material: molded plastic. “Green” molding compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208  Weight: 0.05 grams (Approximate) SOT89 Top View C B E Device symbol E CC Top View Pin Out B Ordering Information (Note 4) Product 2DA1971-7 2DA1971-13 Marking 1S2 1S2 Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YWW 1S2 Top View 1S2 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 1 = 2011) WW = Week code (01 – 53) 2DA1971 Document number: DS35669 Rev: 3 – 2 1 of 7 www.diodes.com July 2014 © Diodes Incorporated Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value -400 -400 -7 -0.5 -1 -250 2DA1971 Unit V V V A A mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range Symbol PD RθJA RθJL TJ, TSTG Value 1.5 83 10.4 -55 to +150 Unit W °C/W °C/W °C ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol ESD HBM ESD MM Value 8,000 400 Unit JEDEC Class V 3B VC Notes: 5. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2DA1971 Document number: DS35669 Rev: 3 – 2 2 of 7 www.diodes.com July 2014 © Diodes Incorporated Thermal Characteristics and Derating information 2DA1971 -IC Collector Current (A) VCE(sat) 1 Limit 25mm x 25mm FR4 1oz Cu; single pulse TA=25°C 100m DC 1s 10m 100ms 10ms 1ms 100µs 1m 100m 1 10 100 -VCE Collector-Emitter Voltage (V) Safe Operating Area 80 25mm x 25mm FR4 1oz Cu 60 D=0.5 40 D=0.2 20 Single Pulse D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Transient Thermal Impedance 1k Max Power Dissipation (W) Max Power Dissipation (W) 1.5 25mm x 25mm FR4 1oz Cu 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 100 25mm x 25mm FR4 1oz Cu; single pulse TA=25°C 10 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Power Dissipation 1k Thermal Resistance (°C/W) 2DA1971 Document number: DS35669 Rev: 3 – 2 3 of 7 www.diodes.com July 2014 © Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current Static Forward Current Transfer Ratio (Note 8) Symbol BVCBO BVCEO BVEBO ICES ICBO IEBO hFE Min -400 -400 -7 - 140 140 Typ - - Collector-Emitter saturation Voltage (Note 8) VCE(sat) - Base-Emitter saturation Voltage (Note 8) Base-Emitter Turn-On Current (Note 8) VBE(sat) VBE(on) - Transition frequency fT - Collector Output Capacitance Delay Time Rise Time Storage Time Fall Time Cobo t(d) t(r) t(s) t(f) - Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% - -0.75 - 75 19 89 111 2165 185 Max - -100 -100 -100 450 400 -250 -400 -0.9 -0.8 - - 2DA1971 Unit V V V nA nA nA - mV V V MHz pF ns ns ns ns Test Condition IC = -100µA IC = -1mA IE = -100µA VCE = -320V VCB = -320V VEB = -6V IC = -20mA, VCE = -5V IC = -100mA, VCE = -5V IC = -100mA, IB = -10mA IC = -200mA, IB = -40mA IC = -100mA, IB = -10mA IC = -200mA, VCE = -10V IC = -50mA, VC.


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