LBAT54LT1

LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes LBAT54LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc Pb-Free package is available 3 1 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAT54LT1 JV3 3000/Tape&Reel LBAT54LT1G (Pb-Free) JV3 3000/Tape&Reel ANODE 1 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Reverse Voltage VR Forward Power Dissipation @ TA = 25°C Derate above 25°C PD Forward Current (DC) IF Junction Temperature Storage Temperature Range TJ Tstg Value 30 225 2.0 200 Max 125 Max – 55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) V(BR)R CT IR 30 — — Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) VF — VF — VF — Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) VF — VF — IF — Repetitive Peak Forward Current Non–Re...