LESHAN RADIO COMPANY, LTD.
Dual Series Schottky Barrier Diodes
LBAT54LT1G
These Schottky barrier diodes are designed ...
LESHAN RADIO COMPANY, LTD.
Dual Series
Schottky Barrier Diodes
LBAT54LT1G
These
Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc We declare that the material of product
compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBAT54LT1G
JV3 3000/Tape&Reel
1
ANODE 1
LBAT54LT3G
JV3 10000/Tape&Reel
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
@ TA = 25°C Derate above 25°C
PD
Forward Current (DC)
IF
Junction Temperature Storage Temperature Range
TJ Tstg
Value 30
225 2.0 200 Max 125 Max – 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V)
V(BR)R CT IR
30 — —
Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc)
VF — VF — VF —
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr —
Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC)
VF — VF — IF —
Repetitive P...