S-LBAS516T1G

LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523(SC79) SMD plastic package. FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA. · We declare that the material of product compliance with RoHS requirements. · S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS · High-speed switching in e.g. surface mounted circuits. LBAS516T1G S-LBAS516T1G 1 2 SOD-523 1 CATHODE 2 ANODE ORDERING INFORMATION Device Marking Shipping LBAS516T1G S-LBAS516T1G LBAS516T3G S-LBAS516T3G 6 6 3000 Tape & Reel 10000 Tape & Reel ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V F forward voltage I R reverse current C d diode capacitance t rr reverse recovery time V fr forward recovery voltage see Fig.2 I F = 1 mA I F = 10 mA I F =50 mA I F = 150 mA see Fig.4 V R = 25 V V R =75 V V R = 25 V; T j = 150 °C V R = 75 V; T j = 150 °C; f = 1 MHz; V R = 0; see Fig.5 when switched from I F=10mA to I R= 10mA; R L= 100 Ω; measured at I R= 1 mA; see Fig.6 when switched from IF = 10 mA; tr = 20 ns; see Fig.7 MAX. 715 855 1 1.25 30 1 30 50 1 4 UNIT mV mV V V nA µA µA µA pF ns 1.75 V THER...