Document
BLV6N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
600V 1.2Ω 6A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS
ID
IDM
PD
EAS IAR EAR Tj TSDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value 600 + 20
6 3.8 24 125 1 490 6 12.5 -55 to +150 -55 to +150
Thermal Characteristics
Symbol Rth j-c Rth j-a
Parameter Thermal Resistance, Junction to case Max. Thermal Resistance, Junction to Ambient Max.
Value 1
62.5
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Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
3/28/2007
BLV6N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
VGS=0V, ID=250uA Reference to 25℃, ID=1mA
VGS=10V, ID=3A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance (note3) VDS=15V, ID=3A
Drain-Source Leakage Current
Drain-Source Leakage Current Tc=125℃
VDS=600V, VGS=0V VDS=480V, VGS=0V
Gate-Source Leakage Current
VGS= ± 20V
Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=480V ID=6A VGS=10V
(note3)
Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VDD=300V
ID=6A
RG=25Ω
note3
(note3)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS=25V VGS=0V f = 1MHz
Min. 600
-
2 -
-
-
Typ. Max. Units - -V
0.6 - V/℃
- 1.2 Ω - 4V 5-S - 1 uA
- 100 uA
35.5 8.1 14.1 14 19 40 26 1074 158 29
±100 -
nA nC nC nC ns ns ns ns pF pF pF
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions Min.
IS Continuous Source Diode Forward Current
-
ISM Pulsed Source Diode Forward Current (note1)
-
VSD Forward On Voltage
VGS=0V, IS=6A
-
t r r Reverse Recovery Time
VGS=0V, IS=6A(note3) -
Qr r
Reverse Recovery Charge
dIF/dt =100A/us
-
Typ. Max.
1020 2
6 24 1.8
-
Units A A V ns uC
Note: (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) L=25mH, Ias=6A,Vdd=50V,Rg=25Ω,staring Tj=25C
(3) Pulse width ≤ 300 us; duty cycle ≤ 2%
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3/28/2007
Typical Characteristics
BLV6N60
N-channel Enhancement Mode Power MOSFET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVdss vs. Junction Temperature
Fig 4. Normalized On-Resistance vs. Junction Temperature
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-3Total 6 Pages
3/28/2007
Typical Characteristics (continued)
BLV6N60
N-channel Enhancement Mode Power MOSFET
Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage
Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature
Fig 7. Gate Charge Characteristics
Fig 8. Capacitance Characteristics
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-4Total 6 Pages
3/28/2007
Typical Characteristics (continued)
BLV6N60
N-channel Enhancement Mode Power MOSFET
Fig 9. Maximum Safe Operating Area
Fig 10. Transient Thermal Response Curve
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-5Total 6 Pages
3/28/2007
Test Circuit and Waveform
BLV6N60
N-channel Enhancement Mode Power MOSFET
Fig 11. Gate Charge Circuit
Fig 12. Gate Charge Waveform
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Unclamped Inductive Switching Test Circuit
Fig 16. Unclamped Inductive Switching Waveforms
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3/28/2007
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