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BLV6N60 Dataheets PDF



Part Number BLV6N60
Manufacturers BELLING
Logo BELLING
Description N-Channel Enhancement Mode Power MOSFET
Datasheet BLV6N60 DatasheetBLV6N60 Datasheet (PDF)

BLV6N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 1.2Ω 6A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.

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BLV6N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 1.2Ω 6A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 6 3.8 24 125 1 490 6 12.5 -55 to +150 -55 to +150 Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Max. Thermal Resistance, Junction to Ambient Max. Value 1 62.5 http://www.belling.com.cn -1Total 6 Pages Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV6N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance VGS=0V, ID=250uA Reference to 25℃, ID=1mA VGS=10V, ID=3A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance (note3) VDS=15V, ID=3A Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ VDS=600V, VGS=0V VDS=480V, VGS=0V Gate-Source Leakage Current VGS= ± 20V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=480V ID=6A VGS=10V (note3) Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=300V ID=6A RG=25Ω note3 (note3) Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=25V VGS=0V f = 1MHz Min. 600 - 2 - - - Typ. Max. Units - -V 0.6 - V/℃ - 1.2 Ω - 4V 5-S - 1 uA - 100 uA 35.5 8.1 14.1 14 19 40 26 1074 158 29 ±100 - nA nC nC nC ns ns ns ns pF pF pF Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min. IS Continuous Source Diode Forward Current - ISM Pulsed Source Diode Forward Current (note1) - VSD Forward On Voltage VGS=0V, IS=6A - t r r Reverse Recovery Time VGS=0V, IS=6A(note3) - Qr r Reverse Recovery Charge dIF/dt =100A/us - Typ. Max. 1020 2 6 24 1.8 - Units A A V ns uC Note: (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) L=25mH, Ias=6A,Vdd=50V,Rg=25Ω,staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2% http://www.belling.com.cn -2Total 6 Pages 3/28/2007 Typical Characteristics BLV6N60 N-channel Enhancement Mode Power MOSFET Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature http://www.belling.com.cn -3Total 6 Pages 3/28/2007 Typical Characteristics (continued) BLV6N60 N-channel Enhancement Mode Power MOSFET Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 7. Gate Charge Characteristics Fig 8. Capacitance Characteristics http://www.belling.com.cn -4Total 6 Pages 3/28/2007 Typical Characteristics (continued) BLV6N60 N-channel Enhancement Mode Power MOSFET Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve http://www.belling.com.cn -5Total 6 Pages 3/28/2007 Test Circuit and Waveform BLV6N60 N-channel Enhancement Mode Power MOSFET Fig 11. Gate Charge Circuit Fig 12. Gate Charge Waveform Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit Fig 16. Unclamped Inductive Switching Waveforms http://www.belling.com.cn -6Total 6 Pages 3/28/2007 .


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