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BLV88N30

N-Channel Enhancement Mode Power MOSFET

Description

BLV88N30 N-channel Enhancement Mode Power MOSFET Preliminary August . 2009 BVDSS RDS(ON) ID 300V 48mΩ 88A 300V 88A VDMOS ，、， PDP ( TC=25oC ) VDS VGS ID IDR ( 1) ( 1) : 1. PW<10us, duty cycle<1% http://www.belling.com.cn 300 + 30 88 176 88 176 V V A A A A Page 1/1 BLV88N30 ( TC=25C ) BVDSS RDS(ON) VGS(th) IDSS IGSS Cis...

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