N-Channel Enhancement Mode Power MOSFET
BLV297
N-channel Enhancement Mode Power MOSFET
• Ease of Paralleling • Fast Switching • Simple Drive Requirements
BVDS...
Description
BLV297
N-channel Enhancement Mode Power MOSFET
Ease of Paralleling Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
200V 2.0Ω 0.65A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit.
o Die size with scribe line Scribe line
o Die Thickness o Metallization
Top Bottom
o Bonding Pad Size
Gate Source
o Passivation
1570µm X 1570µm 80um 300± 20um
Al Ti / Ni / Ag
140µm X 102µm 540µm X 540µm
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
BVDSS RDS(ON) VGS(th) IDSS IGSS VSD
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward On Voltage
VGS=0V, ID=250uA VGS=10V, ID=0.65A VDS=VGS, ID=400uA VDS=200V, VGS=0V VGS= 20V VGS=0V, IS=0.65A
Min. 200
0.5
-
Typ. -
Max. -
2.0 1.8 0.1 10 1.2
Units V Ω V uA nA V
http://www.belling.com.cn
-1Total 1 Pages
2/27/2008
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