BLV297

BLV297 N-channel Enhancement Mode Power MOSFET Ease of Paralleling Fast Switching Simple Drive Requirements BVDSS RDS(ON) ID 200V 2.0Ω 0.65A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. o Die size with scribe line Scribe line o Die Thickness o Metallization Top Bottom o Bonding Pad Size Gate Source o Passivation 1570µm X 1570µm 80um 300± 20um Al Ti / Ni / Ag 140µm X 102µm 540µm X 540µm Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS VSD Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward On Voltage VGS=0V, ID=250uA VGS=10V, ID=0.65A VDS=VGS, ID=400uA VDS=200V, VGS=0V VGS= 20V VGS=0V, IS=0.65A Min. 200 0.5 - Typ. - Max. - 2.0 1.8 0.1 10 1.2 Units V Ω V uA nA V http://www.belling.com.cn -1Total 1 Pages 2/27/2008 ...