LBAS20HT1

LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode Device Marking: JR 1 CATHODE 2 ANODE LBAS20HT1 1 2 SOD– 323 ORDERING INFORMATION Device LBAS20HT1 Package SOD–323 Shipping 3000/Tape & Reel Preferred: devices are recommended choices for future use and best overall value. MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc MARKING DIAGRAM JR M JR= Specific Device Code M = Date Code THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Symbol PD RθJA TJ, Tstg Max 200 1.57 635 –55 to+150 Unit mW mW/°C °C/W °C *FR–5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) IR V(BR) VF CD trr Min – – 250 – – – – Max 1.0 100 – 1000 1250 5.0 50 Unit µAdc Vdc mV pF ns LBAS20HT1–1/2 LESHAN RADIO COMPANY, LTD. LBAS20HT1 820Ω +10 V 2.0 k 100 µH 0.1 µF IF 0.1 µF tr tp 10% t IF trr t 50Ω Output Pulse Generator D.U.T. 50Ω Input Sampling Oscilloscope 90% VR INPUT SIGNAL IR Notes: 1. A 2.0 kΩ vari...