LESHAN RADIO COMPANY, LTD.
Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high spe...
LESHAN RADIO COMPANY, LTD.
Dual Series
Schottky Barrier Diodes
These
Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device LBAT54SWT1G LBAT54SWT3G
Marking B8
B8
Shipping 3000/Tape & Reel
10000/Tape & Reel
LBAT54SWT1G
3
1 2
SOT–323 (SC–70)
ANODE 1
CATHODE 2
3 CATHODE/ANODE
DEVICE MARKING
LBAT54SWT1G= B8
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating
Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current(DC) Junction Temperature Storage Temperature Range
Symbol VR PF
IF TJ T stg
Value 30
Unit Volts
200 1.6 200Max 125Max –55 to +150
mW mW/°C
mA °C °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mAdc) Forward Current (DC) Repe...