LESHAN RADIO COMPANY, LTD.
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high spee...
LESHAN RADIO COMPANY, LTD.
Dual Series
Schottky
Barrier Diodes
These
Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
ORDERING INFORMATION
Device LBAT54SWT1
Package SOT–323
Shipping 3000/Tape & Reel
Preferred: devices are recommended choices for future use and best overall value.
LBAT54SWT1
30 VOLTS DUAL SERIES
SCHOTTKY AND BARRIER
DIODES
3
1 2
SOT–323 (SC–70)
ANODE 1
CATHODE 2
3 CATHODE/ANODE
DEVICE MARKING
LBAT54SWT1 = B8
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating
Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current(DC) Junction Temperature Storage Temperature Range
Symbol VR PF
IF TJ T stg
Value 30
Unit Volts
200 1.6 200Max 125Max –55 to +150
mW mW/°C
mA °C °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mAdc) ...