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HBR10150FR

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR10150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 150 V 175 ℃ 0.72V ...


Jilin Sino

HBR10150FR

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R SCHOTTKY BARRIER DIODE HBR10150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 150 V 175 ℃ 0.72V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-22O TO-22OBF TO-22OF TO-22OHF ORDER MESSAGE Order codes Marking Package HBR10150Z HBR10150 TO-220 HBR10150ZR HBR10150 TO-220 HBR10150F HBR10150 TO-220F HBR10150FR HBR10150 TO-220F HBR10150BF HBR10150 TO-220BF HBR10150BFR HBR10150 TO-220BF HBR10150HF HBR10150 TO-220HF HBR10150HFR HBR10150 TO-220HF Halogen Free NO YES NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev.):201108J 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220) TC=125℃ (TO-220F TO-220BF TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR10150 Value 150 Unit V 150 V 10 A 5 120 A 175 -40~+150 ...




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