B1322

PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.dce/ Power Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994  Features  Allowing supply with the radial taping  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Rating –30 –25 –5 –1 –1.5 1 150 –55 to +150 Unit V V V A A W °C °C  Package  Code MT-2-A1  Pin Name 1. Emitter 2. Collector 3. Base  Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) VCBO VCEO VEBO ICBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob IC = –10 mA, IE = 0 IC = –2 mA, IB = 0 IE = –10 mA, I...