Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual 3-Input NOR" Gate Plus Inverter
The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Logic Swing Independent of Fanout • Pin–for–Pin Replacement for CD4000UB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS* (Voltages Referenced to VSS)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVDD DC Supply Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin, Vout Input or Output Voltage (DC or Transient) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎlin, lout Input or Output Current (DC or Transient), ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎper Pin
– 0.5 to + 18.0 – 0.5 to VDD + 0.5
± 10
V V mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD Power Dissipation, per Package†
500 mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTL Lead Temperature (8–Second Soldering)
260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ* Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
CIRCUIT SCHEMATIC 14 11 12 13
VDD
8
3
4 9
5
VSS 7 6
REV 3 1/94
©MMCot1or4o0la0, I0nUc.B1995 2
10
MC14000UB
L SUFFIX CERAMIC CASE 632
P SUFFIX PLASTIC CASE 646
D SUFFIX SOIC
CASE 751A
ORDERING INFORMATION
MC14XXXUBCP MC14XXXUBCL MC14XXXUBD
Plastic Ceramic SOIC
TA = – 55° to 125°C for all packages.
LOGIC DIAGRAM 3 46 5 11 12 10 13
89 VDD = PIN 14 VSS = PIN 7
PIN ASSIGNMENT
NC NC IN 1A IN 2A IN 3A OUTA VSS
1 2 3 4 5 6 7
14 VDD 13 IN 3B 12 IN 2B 11 IN 1B 10 OUTB 9 OUTC 8 IN 1C
NC = NO CONNECTION
MOTOROLA CMOS LOGIC DATA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (VoltagesReferencedtoVSS)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
VDD
– 55_C
25_C
+ 125_C
Symbol Vdc
Min
Max
Min
Typ #
Max
Min
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin= VDDor0
“0” Level VOL
5.0
—
0.05
—
10 — 0.05 —
15 — 0.05 —
0 0.05 — 0.05 0 0.05 — 0.05 0 0.05 — 0.05
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin = 0 or VDD
“1” Level VOH
5.0 4.95 — 4.95 10 9.95 — 9.95 15 14.95 — 14.95
5.0 10 15
— 4.95 — — 9.95 — — 14.95 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VO = 4.5 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VO = 9.0 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VO = 13.5 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VO = 0.5 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Drive Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VOH = 2.5 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VOH = 13.5 Vdc)
“0” Level VIL
“1” Level VIH
Source
IOH
5.0 — 1.0 10 — 2.0 15 — 2.5
5.0 4.0 10 8.0 15 12.5
— — —
5.0 – 1.2 5.0 – 0.25 10 – 0.62 15 – 1.8
— — — —
— 2.25 — 4.50 — 6.75
4.0 2.75 8.0 5.50 12.5 8.25
– 1.0 – 0.2 – 0.5 – 1.5
– 1.7 – 0.36 – 0.9 – 3.5
1.0 — 1.0 2.0 — 2.0 2.5 — 2.5
— 4.0 — — 8.0 — — 12.5 —
— – 0.7 — — – 0.14 — — – 0.35 — — – 1.1 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VOL = 0.4 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Capacitance ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(Vin = 0)
Sink IOL
Iin Cin
5.0 0.64 — 0.51 0.88
10 1.6 — 1.3 2.25
15 4.2 — 3.4
8.8
— 0.36 — — 0.9 — — 2.4 —
15 — ± 0.1 — ± 0.00001 ± 0.1 — ± 1.0
—— — —
5.0
7.5 —
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎQuiescent Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(Per Package)
IDD 5.0 10
15
— 0.25 — 0.0005 0.25 —
—
0.5
—
0.0010
0.5
—
—
1.0
—
0.0015
1.0
—
7.5 15 30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Supply Current**† ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(Dynamic plus Quiescent, ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPer Gate,CL=50pF)
IT 5.0 10
15
IT = (0.3 µA/kHz) f + IDD/N IT = (0.6 µA/kHz) f + IDD/N IT = (0.8 µA/kHz) f + IDD/N
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Unit Vdc Vdc Vdc
Vdc
mAdc
mAdc µAdc
pF µAdc µAdc
** The formulas given are for the typical characteristics only at 25_C.
†To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µH (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates per package.
This device contains protection circuitry.