MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC546/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1
B...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC546/D
Amplifier
Transistors
NPN Silicon
COLLECTOR 1
BC546, B BC547, A, B, C BC548, A, B, C
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
BC BC BC Symbol 546 547 548 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
65 45 30 Vdc 80 50 30 Vdc
6.0 Vdc 100 mAdc 625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
BC546 BC547 BC548
V(BR)CEO
Collector – Base Breakdown Voltage (IC = 100 µAdc)
BC546 BC547 BC548
V(BR)CBO
Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0)
BC546 BC547 BC548
V(BR)EBO
Collector Cutoff Current
(VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C)
BC546 BC547 BC548 BC546/547/548
ICES
Min
65 45 30
80 50 30
6.0 6.0 6.0
— — — —
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
Typ Max Unit
—— V —— —— —— V —— —— —— V —— —— 0.2 15 nA 0.2 15 0.2 15 — 4.0 µA
REV...