Document
L-7113P3C
IR LED Phototransistor
Made with NPN silicon phototransistor chips.
FEATURES Mechanically and spectrally matched to the L-7113 series infrared emitting LED Lamp Water clear lens RoHS compliant
ELECTRICAL AND RADIANT CHARACTERISTICS TA=25℃
Symbol
Parameter
VBR CEO Collector-to-Emitter Breakdown Voltage
VBR ECO Emitter-to-Collector Breakdown Voltage
VCE (SAT) Collector-to-Emitter Saturation Voltage
ICEO TR TF
I (ON)
Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%)
On State Collector Current
ABSOLUTE MAXIMUM RATING TA=25℃
Parameter Collector-to-Emitter Voltage Emitter-to-Collector Voltage Power Dissipation at (or below) 25℃ Free Air Temperature Operating Temperature Range Storage Temperature Range Lead Soldering Temperature (>5mm for 5 sec)
DIMENSION T-1 3/4 (5mm) Round
Min. Typ. Max. Unit
Test Condition
30 -
-
V
Ic = 100µA Ee=0mW/cm²
5
-
-
V
IE = 100µA Ee=0mW/cm²
-
-
0.8
V
Ic = 2mA Ee=20mW/cm²
-
-
100
nA
VCE = 10V Ee=0mW/cm²
- 15 - µs VCE=5V IC=1mA
- 15 - µs RL=1KΩ
0.1 0.5
-
mA
VCE=5V Ee=1mW/cm² λ=940nm
Max. Ratings 30V 5V
100mW -40℃ ~ +85℃ -40℃ ~ +85℃
260℃
.