SQD15N06-42L

www.vishay.com SQD15N06-42L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY d VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package TO-252 60 0.042 0.060 15 Single TO-252 FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified Package with low thermal resistance Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 60 ± 20 15 10 15 50 18 16.2 37 11 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mount c Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). SYMBOL RthJA RthJC LIMIT 50 4 UNIT V A mJ W °C UNIT °C/W S15-1873-Rev. G, 10-Aug-15 1 Document Number: 68880 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE...