short circuit rugged IGBT
STGB8NC60KD, STGD8NC60KD STGF8NC60KD, STGP8NC60KD
Datasheet
8 A, 600 V short-circuit rugged IGBT
TAB
3 1
D2 PAK
TAB 23...
Description
STGB8NC60KD, STGD8NC60KD STGF8NC60KD, STGP8NC60KD
Datasheet
8 A, 600 V short-circuit rugged IGBT
TAB
3 1
D2 PAK
TAB 23 1
DPAK
TAB
3 2 1
TO-220FP
TO-220
1 23
C(2, TAB)
G(1)
E(3)
NG1E3C2T
Features
Lower on voltage drop (VCE(sat))
Lower Cres / Cies ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
Short-circuit withstand time 10 μs
Applications
High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives
Description
These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
Product status links STGB8NC60KD STGD8NC60KD STGF8NC60KD STGP8NC60KD
DS5489 - Rev 3 - June 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
D²PAK, TO-220
Value DPAK
VCES
Collector-emitter voltage (VGE = 0 V)
600
Continuous collector current at TC = 25 °C
15
IC(1)
Continuous collector current at TC = 100 °C
8
ICL(2)
Turn-off latching current
30
ICP(3)
Pulsed collector current
30
VGE
Gate-emitter voltage
±20
IF
Diode RMS forward current at TC = 25 °C
7
IFSM
Surge non repetitive forward c...
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