2SK2554
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance RDS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO-3P
ADE-208-359 D 5th. Edition
D
G1 2 3 1. Gate 2. Drain (Flange)
S 3. Source
2SK2554
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to sour...
