Elektronische Bauelemente
2SC1162
2.5A , 35V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-...
Elektronische Bauelemente
2SC1162
2.5A , 35V
NPN Plastic Encapsulated
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier
TO-126
CLASSIFICATION OF hFE (1)
Product-Rank 2SC1162-B 2SC1162-C
Range
60~120
100~200
2SC1162-D 160~320
Collector
Base
Emitter
Emitter Collector Base
A E F
N L
M K
B
H J
C D
G
REF.
A B C D E F G
Millimeter
Min. Max.
7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10
2.29 TYP.
REF.
H J K L M N
Millimeter
Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
35 35 5 2.5 750 150, -55~150
Unit
V V V A mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
35
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=1mA, IC=0
Collector Cut – Off Current
ICBO - - 20 μA VCB=35V, IE=0
Emitter Cut – Off Current
IEBO - - 20 μA VEB=5V, IC=0
DC Current Gain
hFE (1) 60 - 320
hFE (2) 20 -
-
VCE=2V, IC=0.5A VCE=2V, IC=1.5A*
C...
