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TC74ACT32FT Dataheets PDF



Part Number TC74ACT32FT
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Quad 2-Input OR Gate
Datasheet TC74ACT32FT DatasheetTC74ACT32FT Datasheet (PDF)

TC74ACT32P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT32P, TC74ACT32F, TC74ACT32FT Quad 2-Input OR Gate The TC74ACT32 is an advanced high speed CMOS 2-INPUT OR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The in.

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TC74ACT32P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT32P, TC74ACT32F, TC74ACT32FT Quad 2-Input OR Gate The TC74ACT32 is an advanced high speed CMOS 2-INPUT OR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are compatible with TTL, NMOS and CMOS output voltage levels. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 4.5 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • Compatible with TTL outputs: VIL = 0.8 V (max) VIH = 2.0 V (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines. • Balanced propagation delays: tpLH ∼− tpHL • Pin and function compatible with 74F32 TC74ACT32P TC74ACT32F TC74ACT32FT Weight DIP14-P-300-2.54 SOP14-P-300-1.27A TSSOP14-P-0044-0.65A : 0.96 g (typ.) : 0.18 g (typ.) : 0.06 g (typ.) Start of commercial production 1989-11 1 2014-03-01 Pin Assignment TC74ACT32P/F/FT IEC Logic Symbol 1A 1 1B 2 1Y 3 2A 4 2B 5 2Y 6 GND 7 (top view) Truth Table A B Y H H H L H H H L H L L L 14 VCC 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y 1A (1) >1 1B (2) 2A (4) 2B (5) 3A (9) 3B (10) 4A (12) 4B (13) (3) 1Y (6) 2Y (8) 3Y (11) 4Y Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 7.0 V −0.5 to VCC + 0.5 V −0.5 to VCC + 0.5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be applied up to 300 mW. 2 2014-03-01 Operating Ranges (Note) TC74ACT32P/F/FT Characteristics Symbol Rating Unit Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time VCC VIN VOUT Topr dt/dV 4.5 to 5.5 0 to VCC 0 to VCC −40 to 85 0 to 10 V V V °C ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage High-level output voltage Symbol VIH VIL VOH Low-level output voltage VOL Input leakage current IIN ICC Quiescent supply current IC Test Condition ― Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max 4.5 to 5.5 2.0 ― ― 2.0 ― V ― 4.5 to 5.5 ― VIN IOH = −50 μA 4.5 = VIH or IOH = −24 mA 4.5 VIL IOH = −75 mA (Note) 5.5 IOL = 50 μA 4.5 VIN = VIL IOL = 24 mA 4.5 IOL = 75 mA (Note) 5.5 VIN = VCC or GND 5.5 4.4 3.94 ― ― ― ― ― VIN = VCC or GND Per input: VIN = 3.4 V Other input: VCC or GND 5.5 ― 5.5 ― ― 0.8 ― 0.8 V 4.5 ― 4.4 ― ― ― 3.80 ― V ― ― 3.85 ― 0.0 0.1 ― 0.1 ― 0.36 ― 0.44 V ― ― ― 1.65 ― ±0.1 ― ±1.0 μA ― 4.0 ― 40.0 μA ― 1.35 ― 1.5 mA Note: This spec indicates the capability of driving 50 Ω transmission lines. One output should be tested at a time for a 10 ms maximum duration. AC Characteristics (CL = 50 pF, RL = 500 Ω, input: tr = tf = 3 ns) Characteristics Symbol Test Condition Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max Propagation delay tpLH time tpHL ― 5.0 ± 0.5 ― 5.2 7.9 1.0 9.0 ns Input capacitance CIN ― ― 5 10 ― 10 pF Power dissipation capacitance CPD (Note) ― 22 ― ― ― pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + I.


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