K3831

Ordering number : ENN8028 2SK3831 N-Channel Silicon MOSFET 2SK3831 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=50µH, IAV=85A *2. L≤50µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings 60 ±20 85 340 2.5 100 150 --55 to +150 271 85 Unit V V A A W W °C °C mJ A Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : K3831 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=43A ID=43A, VGS=10V ID=43A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz min 60 1.2 30 Ratings typ max Unit V 1 µA ±10 µA 2.6 V 50 S 10 13 mΩ 13 18 mΩ 5250 pF 780 pF 525 pF Continued on next page. Any and all SANYO products described or contained...