STGP3NB60HDFP

STGP3NB60HD ® STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGP3NB60HD STGP3NB60HDFP 600 V < 2.8 V 600 V < 2.8 V 3A 3A s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) s LOW ON-VOLTAGE DROP (Vcesat) s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s VERY HIGH FREQUENCY OPERATION s OFF LOSSES INCLUDE TAIL CURRENT s CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES 3 2 1 TO-220 3 2 1 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P ar am e t er VCES Collector-Emitter Voltage (VGS = 0) VGE Gate-Emitter Voltage IC Collector Current (continuous) at Tc = 25 oC IC Collector Current (continuous) at Tc = 100 oC ICM() Collector Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Ts tg Storage T emperature Tj Max. O perating Junct ion T emperature () Pulse width limited by max. junction temperature Va lue STG P7NB60HD STGP7NB60HDF P 600 600 ± 20 ± 20 66 33 24 24 70 35 0.56 0.28 -65 to 150 150 Unit V V A A A W W /o C oC oC June 1999 1/9 STGP3NB60HD/FP THERMAL DATA Rthj-c...