G4PC50U

PD 91470F INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50U UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Wt Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight www.irf.com TO-247AC Max. 600 55 27 220 220 ± 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W °C Typ. ---0.24 ---6 (0.21) Max. 0.64 ---40 ---- ...