SSR2N60A

Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )* Total Power Dissipation (TC=25 oC ) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8”from case for 5-seconds 1. Gate 2. Drain 3. Source Value 600 1.8 1.1 6 +_ 30 141 1.8 4.4 3.0 2.5 44 0.35 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W W/ oC oC Thermal Resistance Symbol Characteristic Typ. R θJC R θJA R θJA Junction-to-Case Junction-to-Ambient * Junction-to-Ambient ---- * When mounted on the minimum pad size recommended (PCB Mount). Max. 2.87 50 110 Units oC /W Rev. B ©1999 Fairchild Semiconductor Corporation SSR/U2N60A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss...