SVF9N90F

SVF9N90F/PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 9A, 900V, RDS(on) (typ.)=1.10Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9N90F SVF9N90PN Package TO-220F-3L TO-3PN Marking SVF9N90F 9N90 Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2012.05.30 Page 1 of 8 SVF9N90F/PN_Datasheet ABSOLUTE MAXIMUM RATINGS (unless otherwise noted, TC=25°C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings SVF9N90F SVF9N90PN 900 ±30 9.0 5.7 36.0 68 240 0.54 1.92 823 -55～+150 -55～+150 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junct...