Ordering number:EN3713
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1507/2SD2280
50V/7A High-Current Switching Appli...
Ordering number:EN3713
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1507/2SD2280
50V/7A High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max.
· Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2039A
[2SB1507/2SD2280]
( ) : 2SB1507
Specifications
E : Emitter C : Collector B : Base SANYO : TO-3PML
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2
fT VCE(sat)
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A IC=(–)4A, IB=(–)0.4A
Ratings (–)60 (–)50 (–)6 (–)7 (–)20 3.0 40 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 30
10
max (–)0.1 (–)0.1 280*
(–)0.4
Unit mA mA
MHz V
* : The 2SB1507/2SD2280 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handl...