DatasheetsPDF.com

B1397 Dataheets PDF



Part Number B1397
Manufacturers Sanyo
Logo Sanyo
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet B1397 DatasheetB1397 Datasheet (PDF)

Ordering number:EN3176A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1397/2SD2100 Compact Motor Driver Applications Features · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. · Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1397/2SD2100] ( ) : 2SB1397 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter.

  B1397   B1397



Document
Ordering number:EN3176A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1397/2SD2100 Compact Motor Driver Applications Features · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. · Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1397/2SD2100] ( ) : 2SB1397 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO hFE1 hFE2 fT VCB=(–)20V, IE=0 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)2A VCE=(–)2V, IC=(–)0.5A Output Capacitance Marking : 2SB1397 : BP 2SD2100 : DP Cob VCB=(–)10V, f=1MHz E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Ratings (–)25 (–)20 (–)6 (–)2 (–)4 1.3 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ (–)70 (–)50 (300) 200 (40)25 max (–)1.0 Unit µA MHz MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1598HA (KT)/12894TH/7149MO, TS No.3176–1/5 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Diode Forwad Voltage Base-to-Emitter Resistance Electrical Connection 2SB1397/2SD2100 Symbol Conditions VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO1 V(BR)CEO2 VF RBE IC=(–)1A, IB=(–)50mA IC=(–)1A, IB=(–)50mA IC=(–)10µA, IE=0 IC=(–)10µA, RBE=∞ IC=(–)10mA, RBE=∞ IF=0.5A Ratings min typ (–)0.25 (–)25 (–)25 (–)20 1.6 max (–)0.5 (–)1.5 (–)1.5 Unit V V V V V kVΩ No.3176–2/5 2SB1397/2SD2100 No.3176–3/5 2SB1397/2SD2100 No.3176–4/5 2SB1397/2SD2100 Specifications of any and all SANYO products described or contained herein stipulate the performance.


D1936 B1397 B1527


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)