Document
Ordering number:EN3176A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1397/2SD2100
Compact Motor Driver Applications
Features
· Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. · Small-sized package making it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038
[2SB1397/2SD2100]
( ) : 2SB1397
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current DC Current Gain Gain-Bandwidth Product
ICBO hFE1 hFE2
fT
VCB=(–)20V, IE=0 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)2A VCE=(–)2V, IC=(–)0.5A
Output Capacitance
Marking : 2SB1397 : BP 2SD2100 : DP
Cob VCB=(–)10V, f=1MHz
E : Emitter C : Collector B : Base SANYO : PCP (Bottom view)
Ratings (–)25 (–)20 (–)6 (–)2 (–)4 1.3 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
(–)70 (–)50
(300) 200
(40)25
max (–)1.0
Unit µA
MHz MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/12894TH/7149MO, TS No.3176–1/5
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Diode Forwad Voltage Base-to-Emitter Resistance
Electrical Connection
2SB1397/2SD2100
Symbol
Conditions
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO1
V(BR)CEO2 VF RBE
IC=(–)1A, IB=(–)50mA
IC=(–)1A, IB=(–)50mA IC=(–)10µA, IE=0 IC=(–)10µA, RBE=∞ IC=(–)10mA, RBE=∞ IF=0.5A
Ratings min typ
(–)0.25
(–)25 (–)25 (–)20
1.6
max (–)0.5 (–)1.5
(–)1.5
Unit
V V V V V kVΩ
No.3176–2/5
2SB1397/2SD2100
No.3176–3/5
2SB1397/2SD2100
No.3176–4/5
2SB1397/2SD2100
Specifications of any and all SANYO products described or contained herein stipulate the performance.