3.0A ULTRAFAST DIODE
WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliab...
Description
WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability
UF5400 – UF5408 Pb
3.0A ULTRAFAST DIODE
AB
A
Mechanical Data
! Case: DO-201AD, Molded Plastic ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-201AD Dim Min Max
A 25.4 — B 7.20 9.50 C 1.20 1.30 D 4.80 5.30
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage
@IF = 3.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM VRWM
VR
UF 5400
50
UF 5401
100
UF 5402
200
UF 5403
300
UF 5404
400
UF 5406
600
UF 5407
800
UF 5408
1000
VR(RMS)
35
70 140 210 280 420 560 700
IO 3.0
IFSM
VFM IRM ...
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