SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE(2)=25(Min.), (VCE=2V, IC=200mA). ᴌComplementary to KTA200.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING 60 45 5 500 -500 625 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
L M
C
KTC200
EPITAXIAL PLANAR
NPN TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emittter Voltage Transition Frequency
ICBO IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT
Collector Output Capacitance
Cob
Note : hFE Classification O:70ᴕ140, Y:120ᴕ240
TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=200mA IC=100mA, IB=10mA VCE=2V, IC=200mA VCE=6V, IC=20mA VCB=6V, IE=0, f=1MHz
MIN. 70 25 -
TYP. -
300 7.0
MAX. 0.1 0.1 240 0.25 1.0 -
UNIT ỌA ỌA
V V MHz pF
1995. 1. 23
Revision No : 0
1/2
COLLECTOR CURRENT I C (mA)
KTC200
I C - VCE
500
400 5.0mA 4.0mA
300
COMMON EMITTER Ta=25 C
3.0mA
2.0mA
200 1.0mA
100 0.5mA
0mA...