MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
650V CoolMOS™ C6 Power Transistor IPx65R190C6
Data S...
MOSFET
Metal Oxide Semiconductor Field Effect
Transistor
CoolMOS C6
650V CoolMOS™ C6 Power
Transistor IPx65R190C6
Data Sheet
Rev. 2.0, 2011-05-09 Final
Industrial & Multimarket
650V CoolMOS™ C6 Power
Transistor
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
700 0.19 73 66 5.9 500
V nC A µJ A/µs
IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6
drain pin 2
gate pin 1
source pin 3
Type / Ordering Code IPW...