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IPA65R190C6 Dataheets PDF



Part Number IPA65R190C6
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet IPA65R190C6 DatasheetIPA65R190C6 Datasheet (PDF)

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th.

  IPA65R190C6   IPA65R190C6


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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 700 0.19 73 66 5.9 500 V  nC A µJ A/µs IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 drain pin 2 gate pin 1 source pin 3 Type / Ordering Code IPW65R190C6 IPB65R190C6 IPI65R190C6 IPP65R190C6 IPA65R190C6 Package PG-TO247 PG-TO263 PG-TO262 PG-TO220 PG-TO220 FullPAK Marking 65C6190 Related Links IFX CoolMOS Webpage IFX Design tools 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2011-05-09 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Final Data Sheet 3 Rev. 2.0, 2011-05-09 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage ID ID,pulse EAS EAR IAR dv/dt VGS Power dissipation for TO-220, TO-247, TO-262, TO-263 Power dissipation for TO-220 FullPAK Operating and storage temperature Mounting torque TO-220, TO-247 Mounting torque TO-220 FullPAK Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3) Ptot Ptot Tj,Tstg IS IS,pulse dv/dt Min. - -20 -30 - Values Typ. Max. - 20.2 12.8 - 66 - 485 - 0.73 - 3.5 - 50 - 20 30 - 151 - - 34 -55 -- 150 60 50 - - 17.5 - - 66 - - 15 Maximum diode commutation speed3) dif/dt 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 500 Unit Note / Test Condition A TC= 25 °C TC= 100°C A TC=25 °C mJ ID=3.5 A,VDD=50 V ID=3.5 A,VDD=50 V A V/ns VDS=0...480 V V static AC (f>1 Hz) W TC=25 °C °C Ncm M3 and M3.5 screws M2.5 screws A A V/ns A/µs TC=25 °C TC=25 °C VDS=0...400 V,ISD  ID, Tj=25 °C Final Data Sheet 4 Rev. 2.0, 2011-05-09 3 Thermal characteristics 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Thermal characteristics Table 3 Thermal characteristics non FullPAK Parameter Symbol Min. Thermal resistance, junction - case RthJC Thermal resistance, junction ambient RthJA - Soldering temperature, wavesoldering only allowed at leads Tsold - Values Typ. - Max. 0.83 62 - 260 Unit Note / Test Condition °C/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Table 4 Therm.


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