Document
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
650V CoolMOS™ C6 Power Transistor IPx65R190C6
Data Sheet
Rev. 2.0, 2011-05-09 Final
Industrial & Multimarket
650V CoolMOS™ C6 Power Transistor
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
700 0.19 73 66 5.9 500
V nC A µJ A/µs
IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6
drain pin 2
gate pin 1
source pin 3
Type / Ordering Code IPW65R190C6 IPB65R190C6 IPI65R190C6 IPP65R190C6 IPA65R190C6
Package PG-TO247 PG-TO263 PG-TO262 PG-TO220 PG-TO220 FullPAK
Marking 65C6190
Related Links IFX CoolMOS Webpage IFX Design tools
1) J-STD20 and JESD22 Final Data Sheet
2
Rev. 2.0, 2011-05-09
650V CoolMOS™ C6 Power Transistor IPx65R190C6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Final Data Sheet
3 Rev. 2.0, 2011-05-09
650V CoolMOS™ C6 Power Transistor IPx65R190C6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings Parameter
Symbol
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage
ID
ID,pulse EAS EAR IAR dv/dt VGS
Power dissipation for TO-220, TO-247, TO-262, TO-263
Power dissipation for TO-220 FullPAK
Operating and storage temperature
Mounting torque TO-220, TO-247
Mounting torque TO-220 FullPAK
Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3)
Ptot Ptot Tj,Tstg
IS IS,pulse dv/dt
Min. -
-20 -30 -
Values Typ. Max. - 20.2
12.8 - 66 - 485 - 0.73 - 3.5 - 50 - 20
30 - 151
- - 34
-55 --
150 60
50
- - 17.5 - - 66 - - 15
Maximum diode commutation speed3)
dif/dt
1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
500
Unit Note / Test Condition
A TC= 25 °C TC= 100°C
A TC=25 °C mJ ID=3.5 A,VDD=50 V
ID=3.5 A,VDD=50 V A V/ns VDS=0...480 V V static
AC (f>1 Hz) W TC=25 °C
°C Ncm M3 and M3.5 screws
M2.5 screws
A A V/ns
A/µs
TC=25 °C
TC=25 °C
VDS=0...400 V,ISD ID,
Tj=25 °C
Final Data Sheet
4 Rev. 2.0, 2011-05-09
3 Thermal characteristics
650V CoolMOS™ C6 Power Transistor IPx65R190C6
Thermal characteristics
Table 3 Thermal characteristics non FullPAK
Parameter
Symbol
Min.
Thermal resistance, junction - case RthJC
Thermal resistance, junction ambient
RthJA
-
Soldering temperature, wavesoldering only allowed at leads
Tsold
-
Values Typ. -
Max. 0.83 62
- 260
Unit Note / Test Condition
°C/W leaded
°C 1.6 mm (0.063 in.) from case for 10 s
Table 4 Therm.