CoolMOS™ Power Transistor
Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capabilit...
CoolMOS™ Power
Transistor
Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge
IPP90R500C3
Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ
900 V 0.5 Ω 68 nC
PG-TO220
CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS
Type IPP90R500C3
Package PG-TO220
Marking 9R500C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse E AS E AR I AR dv /dt V GS
T C=25 °C T C=100 °C T C=25 °C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V
V DS=0...400 V static AC (f>1 Hz)
Power dissipation Operating and storage temperature
P tot T C=25 °C T J, T stg
Mounting torque
M3 and M3.5 screws
Rev. 1.0
page 1
Value 11 6.8 24 388 0.74 2.2 50 ±20 ±30 156
-55 ... 150 60
Unit A
mJ
A V/ns V
W °C Ncm
2008-07-29
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPP90R500C3
Value 6.6 23 4
Unit A
V/ns
Parameter
Symbol Condi...