B763

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB763 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD858 ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO Collector-base voltage Collector-emitter voltage Open emitter Open base VEBO Emitter-base voltage Open collector IC Collector current PC Collector power dissipation TC=25 Tj Junction temperature Tstg Storage temperature VALUE -.60 -60 -5 -5 60 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB763 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;iB=0 V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.3A ICBO Collector cut-off current VCB=-60V IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 hFE-2 DC current gain DC current gain IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V MIN TYP. MAX UNIT -60 V -60 V -5 V -1.0 V -1.5 V -0.1 mA -0.1 mA 40 250 20 2 SavantIC Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Prod...