Si4730EY

New Product Si4730EY Vishay Siliconix Current Sensing MOSFET, N-Channel 30-V (D-S) PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.015 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) 11.7 10.1 SENSE KELVIN S G 1 2 3 4 SO-8 Top View 8D 7D 6D 5D D G SENSE KELVIN N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 11.7 9.8 40 3.3 3.6 2.5 –55 to 175 8.0 6.7 1.6 1.7 1.2 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71177 S-00823—Rev. A, 01-May-00 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 35 77 18 Maximum 42 90 22 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 Si4730EY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID =...