25V N-Channel Enhancement Mode MOSFET
VDS=25V RDS(ON), Vgs@10V,Ids@45A = 6m RDS(ON), Vgs@4.5V,Ids@30A =9m
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
ME70N03A(Pb-Free)
APPLICATIONS
Motherboard (V-Co...
