SVF3N80M/F/D_Datasheet
3A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF3N80M/F/D is an N-channel enhancement mode power...
SVF3N80M/F/D_Datasheet
3A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF3N80M SVF3N80F SVF3N80D SVF3N80DTR
Package Type TO-251-3L TO-220F-3L TO-252-2L TO-252-2L
Marking SVF3N80M SVF3N80F SVF3N80D SVF3N80D
Material Pb free Pb free Pb free Pb free
Packing Tube Tube Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.15 Page 1 of 9
SVF3N80M/F/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS VGS
ID
IDM
PD
EAS TJ Tstg
Rating
SVF3N80M/D
SVF3N80F
800
±30
3.0
1.9
12.0...